9800 TC^next

Next-gen die attach for chiplet & interposer packages

The 9800 TC^next is the latest innovation in thermo compression bonding, designed to meet the evolving trends and stringent requirements of advanced packaging. Engineered for excellence, this system features significantly enhanced key performance indicators, ensuring superior results in every application.

Highlights of the 9800 TC^next

Advanced Micro-Inert Chamber
Optimized for minimal gas consumption, this critical assembly ensures efficient operation and cost savings.
Unmatched Accuracy and Stability
Achieve precise bonding with long-term stability, perfect for advancing bump pitch scaling plans.
Powerful Bonding Capabilities
The 9800 TC^next delivers bonding forces up to 500 N, with an optional upgrade to 1 kN, accommodating a variety of bonding needs.
High-Resolution Vision Systems
Ensures precise alignment and inspection, crucial for maintaining high quality standards.
Thin Die Capability
Expertly handles thin dies, expanding your application possibilities.
Superior Process Control
Advanced monitoring functions provide unparalleled control over the bonding process.
Configurable Material Feeding System: Offers incredible flexibility, allowing for customized material handling to suit diverse requirements.

The 9800 TC^nextsupports a wide range of applications, providing the versatility and performance you need to stay ahead in the rapidly evolving landscape of advanced packaging.

More information

Seeing is believing, so we are more than happy to give you a demonstration on a live system. Discover the future of thermo compression bonding now, with the 9800 TC^next. Contact us today for more information.

Specifications
Downloads

Specifications

Material Handling

Substrate wafer (through EFEM)	Up to 12” wafer from FOUP (3 x FOUP ports) & quarter panel (300 x 300 mm)
Substrate wafer thickness	0.5 mm to 2.0 mm

Component Supply

Tray (Jedec) handling	Automatic Tray handling via FOUP
T&R cart (roadmap)	8 mm up to 56 mm feeder
T&R cart capacity (roadmap)	Max. 60 x 8 mm feeder (30 pcs. per side)
Wafer handling (roadmap)	P&P from taped wafer, waffle pack, gel pack, etc. (up to 15" frames) via FOUP
Die transfer	Non flip & flip
Die size	0.3 x 0.3 mm up to 70 x 70 mm**
Die thickness	<25 µm up to 1.1 mm

Thermal capabilities @35 mm heater size (70 mm heater size roadmap)**

Substrate wafer temperature	250°C ± 5°C @ 3s over 300 mm
Bond head temperature	450°C (500°C roadmap)
Bond head heating rate	>200°C/sec from 100°C to 400°C
Bond head cooling rate	>75°C/sec from 350°C to 150°C
Bond head thermal control & uniformity	static thermal control: ± 1°C dynamic thermal variation: <5°C static thermal uniformity: ± 2.5°C

** heater sizes up to 100 x 100mm under feasibility review

P&P capability @35 mm heater size (70 mm heater size roadmap)**

Accuracy X & Y [GoG @1500C]	0.5 µm @3s
Accuracy theta [GoG @1500C]	1 mdeg @3s
WCC (worst case corner) [GoG @1500CJ	0.8 µm @3s
Bond head Z control & accuracy	± 1 µm @3s
Bond force	-15 N up to 500 N (1kN on request) ± 5% of set force @3s (forces > 2 N) ± 5% of set force @3s (forces -15 N to -2 N) ± 0.1 N of set force @3s (forces -2 N to 2 N)
Tilt control	< 1 µm (< 2 µm for 70mm heater size)
UPH (bond time 1 sec)	up to 2500 (product/process dependent)

** heater sizes up to 100 x 100mm under feasibility review

Other

Inert environment	N₂ micro chamber (< 100 ppm O₂ @ 75 l/min) / hot pick capability / flux exhaust (optional & on request)
Cleanroom class	ISO 5* / Class 100 (FS 209E)
Footprint	6.08 m² (configuration dependent)
Weight	Approx. 7.8 tons (configuration dependent)

* to be proven in production environment

Software & Automation

Bond traces and trace viewer
Bin code matched bonding
Easy machine calibration via SW assistants
Inline process monitoring and control
Main supply surveillance
Easy product setup via SW assistants
Parameter provider via SECS/GEM
E142 map handling
Full factory automation for Industry 4.0

Downloads

9800 TC next.pdf

9800 TC next